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1. product pro?le 1.1 general description very low capacitance bidirectional electrostatic discharge (esd) protection diodes in small surface-mounted device (smd) plastic packages designed to protect one signal line from the damage caused by esd and other transients. 1.2 features 1.3 applications 1.4 quick reference data pesd5v0v1ba; pesd5v0v1bb; PESD5V0V1BL very low capacitance bidirectional esd protection diodes rev. 01 28 july 2009 product data sheet table 1. product overview type number package package con?guration nxp jeita pesd5v0v1ba sod323 sc-76 very small pesd5v0v1bb sod523 sc-79 ultra small and ?at lead PESD5V0V1BL sod882 - leadless ultra small n bidirectional esd protection of one line n esd protection up to 30 kv n very low diode capacitance: c d =11pf n iec 61000-4-2; level 4 (esd) n max. peak pulse power: p pp =45w n iec 61000-4-5 (surge); i pp = 4.8 a n low clamping voltage: v cl = 12.5 v n aec-q101 quali?ed n ultra low leakage current: i rm <1na n computers and peripherals n communication systems n audio and video equipment n portable electronics n cellular handsets and accessories n 10/100 mbit/s ethernet n subscriber identity module (sim) card protection n firewire table 2. quick reference data t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v rwm reverse standoff voltage - - 5 v c d diode capacitance f = 1 mhz; v r =0v- 1113pf
pesd5v0v1ba_bb_bl_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 28 july 2009 2 of 13 nxp semiconductors pesd5v0v1ba/bb/bl very low capacitance bidirectional esd protection diodes 2. pinning information [1] the marking bar indicates pin 1. 3. ordering information 4. marking 5. limiting values table 3. pinning pin description simpli?ed outline graphic symbol pesd5v0v1ba; pesd5v0v1bb 1 cathode (diode 1) [1] 2 cathode (diode 2) PESD5V0V1BL 1 cathode (diode 1) [1] 2 cathode (diode 2) 001aab540 12 sym045 2 1 2 1 transparent top view sym045 2 1 table 4. ordering information type number package name description version pesd5v0v1ba sc-76 plastic surface-mounted package; 2 leads sod323 pesd5v0v1bb sc-79 plastic surface-mounted package; 2 leads sod523 PESD5V0V1BL - leadless ultra small plastic package; 2 terminals; body 1.0 0.6 0.5 mm sod882 table 5. marking codes type number marking code pesd5v0v1ba 1k pesd5v0v1bb z9 PESD5V0V1BL x1 table 6. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per diode p pp peak pulse power t p = 8/20 m s [1] -45w i pp peak pulse current t p = 8/20 m s [1] - 4.8 a
pesd5v0v1ba_bb_bl_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 28 july 2009 3 of 13 nxp semiconductors pesd5v0v1ba/bb/bl very low capacitance bidirectional esd protection diodes [1] non-repetitive current pulse 8/20 m s exponential decay waveform according to iec 61000-4-5. [1] device stressed with ten non-repetitive esd pulses. per device t j junction temperature - 150 c t amb ambient temperature - 55 +150 c t stg storage temperature - 65 +150 c table 7. esd maximum ratings t amb =25 c unless otherwise speci?ed. symbol parameter conditions min max unit v esd electrostatic discharge voltage iec 61000-4-2 (contact discharge) [1] -30kv machine model - 2 kv mil-std-883 (human body model) -16kv table 8. esd standards compliance standard conditions iec 61000-4-2; level 4 (esd) > 15 kv (air); > 8 kv (contact) mil-std-883; class 3b (human body model) > 8 kv table 6. limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit fig 1. 8/20 m s pulse waveform according to iec 61000-4-5 fig 2. esd pulse waveform according to iec 61000-4-2 t ( m s) 040 30 10 20 001aaa630 40 80 120 i pp (%) 0 e - t 100 % i pp ; 8 m s 50 % i pp ; 20 m s 001aaa631 i pp 100 % 90 % t 30 ns 60 ns 10 % t r = 0.7 ns to 1 ns
pesd5v0v1ba_bb_bl_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 28 july 2009 4 of 13 nxp semiconductors pesd5v0v1ba/bb/bl very low capacitance bidirectional esd protection diodes 6. characteristics [1] non-repetitive current pulse 8/20 m s exponential decay waveform according to iec 61000-4-5. table 9. characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit v rwm reverse standoff voltage - - 5 v i rm reverse leakage current v rwm = 5 v - < 1 10 na v br breakdown voltage i r = 5 ma 5.8 6.8 7.8 v c d diode capacitance f = 1 mhz; v r =0v - 1113pf v cl clamping voltage i pp = 4.8 a [1] - - 12.5 v r dif differential resistance i r =5ma --35 w t amb =25 c fig 3. peak pulse power as a function of exponential pulse duration; typical values fig 4. relative variation of peak pulse power as a function of junction temperature; typical values t p ( m s) 110 3 10 2 10 006aab606 10 2 10 10 3 p pp (w) 1 t j ( c) 0 200 150 50 100 001aaa193 0.4 0.8 1.2 p pp 0 p pp(25 c)
pesd5v0v1ba_bb_bl_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 28 july 2009 5 of 13 nxp semiconductors pesd5v0v1ba/bb/bl very low capacitance bidirectional esd protection diodes f = 1 mhz; t amb =25 c fig 5. diode capacitance as a function of reverse voltage; typical values fig 6. relative variation of reverse leakage current as a function of junction temperature; typical values fig 7. v-i characteristics for a bidirectional esd protection diode v r (v) 05 4 23 1 006aab607 8 10 12 c d (pf) 6 006aab608 1 10 - 1 10 2 10 10 3 10 - 2 t j ( c) - 100 150 100 050 - 50 i rm i rm(25 c) 006aaa676 - v cl - v br - v rwm v cl v br v rwm - i rm i rm - i r i r - i pp i pp - +
pesd5v0v1ba_bb_bl_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 28 july 2009 6 of 13 nxp semiconductors pesd5v0v1ba/bb/bl very low capacitance bidirectional esd protection diodes fig 8. esd clamping test setup and waveforms 006aab609 50 w r z c z dut (device under test) gnd 450 w rg 223/u 50 w coax esd tester acc. to iec 61000-4-2 c z = 150 pf; r z = 330 w 4 ghz digital oscilloscope 10 attenuator unclamped +8 kv esd pulse waveform (iec 61000-4-2 network) vertical scale = 10 a/div horizontal scale = 15 ns/div gnd unclamped - 8 kv esd pulse waveform (iec 61000-4-2 network) vertical scale = 10 a/div horizontal scale = 15 ns/div clamped +8 kv esd pulse waveform (iec 61000-4-2 network) vertical scale = 10 v/div horizontal scale = 100 ns/div gnd clamped - 8 kv esd pulse waveform (iec 61000-4-2 network) gnd vertical scale = 10 v/div horizontal scale = 100 ns/div
pesd5v0v1ba_bb_bl_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 28 july 2009 7 of 13 nxp semiconductors pesd5v0v1ba/bb/bl very low capacitance bidirectional esd protection diodes 7. application information the pesd5v0v1bx series is designed for the protection of one bidirectional data or signal line from the damage caused by esd and surge pulses. the devices may be used on lines where the signal polarities are both, positive or negative with respect to ground. the pesd5v0v1bx series provides a surge capability of 45 w per line for an 8/20 m s waveform. circuit board layout and protection device placement circuit board layout is critical for the suppression of esd, electrical fast transient (eft) and surge transients. the following guidelines are recommended: 1. place the device as close to the input terminal or connector as possible. 2. the path length between the device and the protected line should be minimized. 3. keep parallel signal paths to a minimum. 4. avoid running protected conductors in parallel with unprotected conductors. 5. minimize all printed-circuit board (pcb) conductive loops including power and ground loops. 6. minimize the length of the transient return path to ground. 7. avoid using shared transient return paths to a common ground point. 8. ground planes should be used whenever possible. for multilayer pcbs, use ground vias. 8. test information 8.1 quality information this product has been quali?ed in accordance with the automotive electronics council (aec) standard q101 - stress test quali?cation for discrete semiconductors , and is suitable for use in automotive applications. fig 9. application diagram 006aab610 pesd5v0v1bx gnd line to be protected
pesd5v0v1ba_bb_bl_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 28 july 2009 8 of 13 nxp semiconductors pesd5v0v1ba/bb/bl very low capacitance bidirectional esd protection diodes 9. package outline 10. packing information [1] for further information and the availability of packing methods, see section 14 . fig 10. package outline pesd5v0v1ba (sod323/sc-76) fig 11. package outline pesd5v0v1bb (sod523/sc-79) fig 12. package outline PESD5V0V1BL (sod882) 03-12-17 dimensions in mm 0.25 0.10 0.45 0.15 2.7 2.3 1.8 1.6 0.40 0.25 1.1 0.8 1.35 1.15 1 2 02-12-13 dimensions in mm 1.65 1.55 1.25 1.15 0.17 0.11 0.34 0.26 0.65 0.58 0.85 0.75 1 2 03-04-17 dimensions in mm 0.55 0.47 0.65 0.62 0.55 0.50 0.46 cathode marking on top side 1.02 0.95 0.30 0.22 0.30 0.22 2 1 table 10. packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 8000 10000 pesd5v0v1ba sod323 4 mm pitch, 8 mm tape and reel -115 - -135 pesd5v0v1bb sod523 2 mm pitch, 8 mm tape and reel - -315 - 4 mm pitch, 8 mm tape and reel -115 - -135 PESD5V0V1BL sod882 2 mm pitch, 8 mm tape and reel - - -315
pesd5v0v1ba_bb_bl_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 28 july 2009 9 of 13 nxp semiconductors pesd5v0v1ba/bb/bl very low capacitance bidirectional esd protection diodes 11. soldering fig 13. re?ow soldering footprint pesd5v0v1ba (sod323/sc-76) fig 14. wave soldering footprint pesd5v0v1ba (sod323/sc-76) 0.95 1.65 2.2 2.1 3.05 solder lands solder resist occupied area solder paste 0.5 (2 ) 0.6 (2 ) 0.6 (2 ) 0.5 (2 ) sod323_fr dimensions in mm 1.5 (2 ) 2.9 5 1.2 (2 ) 2.75 sod323_fw solder lands solder resist occupied area preferred transport direction during soldering dimensions in mm
pesd5v0v1ba_bb_bl_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 28 july 2009 10 of 13 nxp semiconductors pesd5v0v1ba/bb/bl very low capacitance bidirectional esd protection diodes re?ow soldering is the only recommended soldering method. fig 15. re?ow soldering footprint pesd5v0v1bb (sod523/sc-79) re?ow soldering is the only recommended soldering method. fig 16. re?ow soldering footprint PESD5V0V1BL (sod882) solder lands solder resist occupied area solder paste dimensions in mm 0.6 (2 ) 0.5 (2 ) 2.15 1.1 0.7 (2 ) 0.8 (2 ) 1.2 sod523_fr solder lands solder resist occupied area solder paste sod882_fr 0.9 0.3 (2 ) r0.05 (8 ) 0.6 (2 ) 0.7 (2 ) 0.4 (2 ) 1.3 0.7 dimensions in mm
pesd5v0v1ba_bb_bl_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 28 july 2009 11 of 13 nxp semiconductors pesd5v0v1ba/bb/bl very low capacitance bidirectional esd protection diodes 12. revision history table 11. revision history document id release date data sheet status change notice supersedes pesd5v0v1ba_bb_bl_1 20090728 product data sheet - -
pesd5v0v1ba_bb_bl_1 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 01 28 july 2009 12 of 13 nxp semiconductors pesd5v0v1ba/bb/bl very low capacitance bidirectional esd protection diodes 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 13.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors pesd5v0v1ba/bb/bl very low capacitance bidirectional esd protection diodes ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 28 july 2009 document identifier: pesd5v0v1ba_bb_bl_1 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 15. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 application information. . . . . . . . . . . . . . . . . . . 7 8 test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 8.1 quality information . . . . . . . . . . . . . . . . . . . . . . 7 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 10 packing information. . . . . . . . . . . . . . . . . . . . . . 8 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 12 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 13.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 13.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 14 contact information. . . . . . . . . . . . . . . . . . . . . 12 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

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